2N2907
vs
JANTX2N2907
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MOTOROLA SEMICONDUCTOR PRODUCTS
|
NATIONAL SEMICONDUCTOR CORP
|
| Package Description |
,
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| Collector Current-Max (IC) |
0.6 A
|
|
| Configuration |
Single
|
SINGLE
|
| DC Current Gain-Min (hFE) |
30
|
30
|
| Operating Temperature-Max |
175 °C
|
200 °C
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation-Max (Abs) |
0.4 W
|
|
| Surface Mount |
NO
|
NO
|
| Transition Frequency-Nom (fT) |
200 MHz
|
200 MHz
|
| Base Number Matches |
54
|
7
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.29.00.75
|
| Collector-Base Capacitance-Max |
|
8 pF
|
| Collector-Emitter Voltage-Max |
|
40 V
|
| JEDEC-95 Code |
|
TO-18
|
| JESD-30 Code |
|
O-MBCY-W3
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
3
|
| Package Body Material |
|
METAL
|
| Package Shape |
|
ROUND
|
| Package Style |
|
CYLINDRICAL
|
| Power Dissipation Ambient-Max |
|
1.7 W
|
| Qualification Status |
|
Not Qualified
|
| Reference Standard |
|
MIL
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
BOTTOM
|
| Transistor Application |
|
AMPLIFIER
|
| Transistor Element Material |
|
SILICON
|
| Turn-off Time-Max (toff) |
|
100 ns
|
| Turn-on Time-Max (ton) |
|
45 ns
|
| VCEsat-Max |
|
1.6 V
|
|
|
|
Compare JANTX2N2907 with alternatives