2N4355
vs
JANS2N2906AL
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
CENTRAL SEMICONDUCTOR CORP
|
DEFENSE LOGISTICS AGENCY
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.95
|
|
| Collector Current-Max (IC) |
1 A
|
0.6 A
|
| Collector-Base Capacitance-Max |
30 pF
|
|
| Collector-Emitter Voltage-Max |
60 V
|
60 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
75
|
40
|
| JEDEC-95 Code |
TO-105
|
|
| JESD-30 Code |
O-PBCY-W3
|
O-MBCY-W3
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation Ambient-Max |
0.35 W
|
|
| Power Dissipation-Max (Abs) |
0.35 W
|
|
| Qualification Status |
Not Qualified
|
Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
100 MHz
|
|
| Turn-off Time-Max (toff) |
400 ns
|
300 ns
|
| Turn-on Time-Max (ton) |
100 ns
|
45 ns
|
| VCEsat-Max |
1 V
|
|
| Base Number Matches |
3
|
1
|
| Package Description |
|
TO-18, 3 PIN
|
| Case Connection |
|
COLLECTOR
|
| Reference Standard |
|
MIL-19500/291M
|
|
|
|
Compare 2N4355 with alternatives
Compare JANS2N2906AL with alternatives