2N5087
vs
2N5087STOB
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
ZETEX PLC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.05 A
|
0.05 A
|
| Collector-Base Capacitance-Max |
4 pF
|
|
| Collector-Emitter Voltage-Max |
50 V
|
50 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
250
|
250
|
| JEDEC-95 Code |
TO-92
|
|
| JESD-30 Code |
O-PBCY-W3
|
R-PSIP-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
200 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
CYLINDRICAL
|
IN-LINE
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation-Max (Abs) |
0.35 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
THROUGH-HOLE
|
| Terminal Position |
BOTTOM
|
SINGLE
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
40 MHz
|
40 MHz
|
| VCEsat-Max |
0.3 V
|
0.3 V
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Package Description |
|
IN-LINE, R-PSIP-T3
|
| Additional Feature |
|
LOW NOISE
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Terminal Finish |
|
MATTE TIN
|
|
|
|
Compare 2N5087 with alternatives
Compare 2N5087STOB with alternatives