2N5401
vs
MMBT5401-13-F
feature comparison
| Part Life Cycle Code |
Contact Manufacturer
|
Active
|
| Ihs Manufacturer |
SHANGHAI LUNSURE ELECTRONIC TECHNOLOGY CO LTD
|
DIODES INC
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.95
|
|
| Collector Current-Max (IC) |
0.6 A
|
0.6 A
|
| Collector-Base Capacitance-Max |
6 pF
|
|
| Collector-Emitter Voltage-Max |
150 V
|
150 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
50
|
50
|
| JEDEC-95 Code |
TO-92
|
|
| JESD-30 Code |
O-PBCY-T3
|
R-PDSO-G3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
CYLINDRICAL
|
SMALL OUTLINE
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation Ambient-Max |
0.625 W
|
|
| Power Dissipation-Max (Abs) |
1.5 W
|
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
THROUGH-HOLE
|
GULL WING
|
| Terminal Position |
BOTTOM
|
DUAL
|
| Transistor Application |
AMPLIFIER
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
100 MHz
|
100 MHz
|
| VCEsat-Max |
0.5 V
|
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Additional Feature |
|
HIGH RELIABILITY
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Reference Standard |
|
AEC-Q101
|
| Terminal Finish |
|
MATTE TIN
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare 2N5401 with alternatives
Compare MMBT5401-13-F with alternatives