2N5401TRE
vs
2N5401
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
CENTRAL SEMICONDUCTOR CORP
|
SAMSUNG SEMICONDUCTOR INC
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector-Emitter Voltage-Max |
150 V
|
150 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
60
|
50
|
| JEDEC-95 Code |
TO-92
|
TO-92
|
| JESD-30 Code |
O-PBCY-T3
|
O-PBCY-W3
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
THROUGH-HOLE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
100 MHz
|
100 MHz
|
| Base Number Matches |
2
|
1
|
| Collector Current-Max (IC) |
|
0.6 A
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
0.63 W
|
| Transistor Application |
|
AMPLIFIER
|
|
|
|
Compare 2N5401TRE with alternatives
Compare 2N5401 with alternatives