2N5416
vs
JAN2N5416
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
MOTOROLA INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
1 A
|
1 A
|
| Collector-Emitter Voltage-Max |
300 V
|
300 V
|
| Configuration |
SINGLE
|
SINGLE
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
NOT SPECIFIED
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
46
|
10
|
| HTS Code |
|
8541.29.00.95
|
| Collector-Base Capacitance-Max |
|
15 pF
|
| DC Current Gain-Min (hFE) |
|
30
|
| JEDEC-95 Code |
|
TO-205AD
|
| JESD-30 Code |
|
O-MBCY-W3
|
| Number of Terminals |
|
3
|
| Operating Temperature-Max |
|
200 °C
|
| Package Body Material |
|
METAL
|
| Package Shape |
|
ROUND
|
| Package Style |
|
CYLINDRICAL
|
| Power Dissipation Ambient-Max |
|
10 W
|
| Qualification Status |
|
Not Qualified
|
| Reference Standard |
|
MIL
|
| Surface Mount |
|
NO
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
BOTTOM
|
| Transistor Application |
|
AMPLIFIER
|
|
|
|
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