2N5550
vs
2N5550
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
ZETEX PLC
|
| Part Package Code |
TO-92
|
|
| Package Description |
TO-92, 3 PIN
|
TO-92 STYLE, E-LINE PACKAGE-3
|
| Pin Count |
3
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.6 A
|
0.6 A
|
| Collector-Emitter Voltage-Max |
140 V
|
140 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
20
|
60
|
| JEDEC-95 Code |
TO-92
|
|
| JESD-30 Code |
O-PBCY-T3
|
R-PSIP-W3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
200 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
CYLINDRICAL
|
IN-LINE
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
0.35 W
|
0.35 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
WIRE
|
| Terminal Position |
BOTTOM
|
SINGLE
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
100 MHz
|
100 MHz
|
| Base Number Matches |
1
|
9
|
| Rohs Code |
|
No
|
| JESD-609 Code |
|
e0
|
| Peak Reflow Temperature (Cel) |
|
235
|
| Terminal Finish |
|
TIN LEAD
|
| Time@Peak Reflow Temperature-Max (s) |
|
10
|
| VCEsat-Max |
|
0.25 V
|
|
|
|
Compare 2N5550 with alternatives
Compare 2N5550 with alternatives