2N5550RL1
vs
2N5550RLRA
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
MOTOROLA INC
|
MOTOROLA SEMICONDUCTOR PRODUCTS
|
| Package Description |
CYLINDRICAL, O-PBCY-T3
|
,
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.29.00.75
|
|
| Additional Feature |
EUROPEAN PART NUMBER
|
|
| Collector Current-Max (IC) |
0.6 A
|
0.6 A
|
| Collector-Base Capacitance-Max |
6 pF
|
|
| Collector-Emitter Voltage-Max |
140 V
|
|
| Configuration |
SINGLE
|
Single
|
| DC Current Gain-Min (hFE) |
20
|
|
| JEDEC-95 Code |
TO-92
|
|
| JESD-30 Code |
O-PBCY-T3
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
ROUND
|
|
| Package Style |
CYLINDRICAL
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
1.5 W
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
BOTTOM
|
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
|
| Transition Frequency-Nom (fT) |
100 MHz
|
100 MHz
|
| VCEsat-Max |
0.25 V
|
|
| Base Number Matches |
3
|
5
|
| Rohs Code |
|
No
|
| Power Dissipation-Max (Abs) |
|
0.35 W
|
|
|
|