2N5550RLRA
vs
2N5550RL1
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
MOTOROLA SEMICONDUCTOR PRODUCTS
|
MOTOROLA INC
|
| Package Description |
,
|
CYLINDRICAL, O-PBCY-T3
|
| Reach Compliance Code |
unknown
|
unknown
|
| Collector Current-Max (IC) |
0.6 A
|
0.6 A
|
| Configuration |
Single
|
SINGLE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
0.35 W
|
|
| Surface Mount |
NO
|
NO
|
| Transition Frequency-Nom (fT) |
100 MHz
|
100 MHz
|
| Base Number Matches |
5
|
3
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.29.00.75
|
| Additional Feature |
|
EUROPEAN PART NUMBER
|
| Collector-Base Capacitance-Max |
|
6 pF
|
| Collector-Emitter Voltage-Max |
|
140 V
|
| DC Current Gain-Min (hFE) |
|
20
|
| JEDEC-95 Code |
|
TO-92
|
| JESD-30 Code |
|
O-PBCY-T3
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
3
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
ROUND
|
| Package Style |
|
CYLINDRICAL
|
| Power Dissipation Ambient-Max |
|
1.5 W
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
THROUGH-HOLE
|
| Terminal Position |
|
BOTTOM
|
| Transistor Application |
|
AMPLIFIER
|
| Transistor Element Material |
|
SILICON
|
| VCEsat-Max |
|
0.25 V
|
|
|
|