2N5551TFR-Y
vs
2N5551TA-Y
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
ON SEMICONDUCTOR
|
ON SEMICONDUCTOR
|
| Package Description |
CYLINDRICAL, O-PBCY-T3
|
CYLINDRICAL, O-PBCY-T3
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.6 A
|
0.6 A
|
| Collector-Base Capacitance-Max |
6 pF
|
6 pF
|
| Collector-Emitter Voltage-Max |
160 V
|
160 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
180
|
180
|
| JEDEC-95 Code |
TO-92
|
TO-92
|
| JESD-30 Code |
O-PBCY-T3
|
O-PBCY-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
0.625 W
|
0.625 W
|
| Power Dissipation-Max (Abs) |
0.625 W
|
0.625 W
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
100 MHz
|
100 MHz
|
| VCEsat-Max |
0.2 V
|
0.2 V
|
| Base Number Matches |
1
|
1
|
| HTS Code |
|
8541.21.00.95
|
|
|
|
Compare 2N5551TFR-Y with alternatives
Compare 2N5551TA-Y with alternatives