2N5581E3
vs
2N706
feature comparison
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
MICROSEMI CORP
|
CENTRAL SEMICONDUCTOR CORP
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.8 A
|
0.05 A
|
| Collector-Emitter Voltage-Max |
40 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
40
|
20
|
| JEDEC-95 Code |
TO-46
|
|
| JESD-30 Code |
O-MBCY-W3
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
|
| Package Body Material |
METAL
|
|
| Package Shape |
ROUND
|
|
| Package Style |
CYLINDRICAL
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
|
| Terminal Position |
BOTTOM
|
|
| Transistor Element Material |
SILICON
|
|
| Transition Frequency-Nom (fT) |
250 MHz
|
100 MHz
|
| Base Number Matches |
1
|
33
|
| Rohs Code |
|
No
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
100 °C
|
| Power Dissipation-Max (Abs) |
|
1 W
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
Compare 2N5581E3 with alternatives