2N6080
vs
MRF652
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
STMICROELECTRONICS
|
MOTOROLA INC
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
1 A
|
2 A
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
5
|
10
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
200 °C
|
200 °C
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
12 W
|
25 W
|
| Surface Mount |
NO
|
NO
|
| Base Number Matches |
10
|
5
|
| Package Description |
|
POST/STUD MOUNT, O-CRPM-F4
|
| Pin Count |
|
4
|
| Manufacturer Package Code |
|
CASE 244-04
|
| HTS Code |
|
8541.29.00.75
|
| Additional Feature |
|
WITH EMITTER BALLASTING RESISTORS
|
| Collector-Base Capacitance-Max |
|
15 pF
|
| Collector-Emitter Voltage-Max |
|
16 V
|
| Highest Frequency Band |
|
ULTRA HIGH FREQUENCY BAND
|
| JESD-30 Code |
|
O-CRPM-F4
|
| Number of Terminals |
|
4
|
| Package Body Material |
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
|
ROUND
|
| Package Style |
|
POST/STUD MOUNT
|
| Power Dissipation Ambient-Max |
|
25 W
|
| Power Gain-Min (Gp) |
|
10 dB
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
FLAT
|
| Terminal Position |
|
RADIAL
|
| Transistor Application |
|
AMPLIFIER
|
| Transistor Element Material |
|
SILICON
|
|
|
|
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