2N6083
vs
VHB10-12F
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
MICROSEMI CORP
|
ASI SEMICONDUCTOR INC
|
| Package Description |
POST/STUD MOUNT, O-XRPM-F4
|
FLANGE MOUNT, O-CRFM-F4
|
| Pin Count |
4
|
4
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
HIGH EFFICIENCY, WITH EMITTER BALLASTED RESISTORS
|
|
| Collector Current-Max (IC) |
4 A
|
2 A
|
| Collector-Base Capacitance-Max |
130 pF
|
45 pF
|
| Collector-Emitter Voltage-Max |
18 V
|
18 V
|
| Configuration |
SINGLE WITH BUILT-IN RESISTOR
|
SINGLE
|
| DC Current Gain-Min (hFE) |
5
|
5
|
| Highest Frequency Band |
VERY HIGH FREQUENCY BAND
|
VERY HIGH FREQUENCY BAND
|
| JESD-30 Code |
O-XRPM-F4
|
O-CRFM-F4
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Temperature-Max |
200 °C
|
200 °C
|
| Package Body Material |
UNSPECIFIED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
POST/STUD MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
65 W
|
20 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
RADIAL
|
RADIAL
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
200 MHz
|
|
| Base Number Matches |
1
|
1
|
| Case Connection |
|
EMITTER
|
|
|
|
Compare 2N6083 with alternatives
Compare VHB10-12F with alternatives