2N6484
vs
ZXMN3F318DN8TA
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
CALOGIC LLC
|
DIODES INC
|
Package Description |
CYLINDRICAL, O-MBCY-W6
|
SMALL OUTLINE, R-PDSO-G8
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.21.00.95
|
|
Additional Feature |
LOW NOISE
|
|
Configuration |
SEPARATE, 2 ELEMENTS
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
FET Technology |
JUNCTION
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
3.5 pF
|
|
JEDEC-95 Code |
TO-71
|
|
JESD-30 Code |
O-MBCY-W6
|
R-PDSO-G8
|
JESD-609 Code |
e0
|
e3
|
Number of Elements |
2
|
2
|
Number of Terminals |
6
|
8
|
Operating Mode |
DEPLETION MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
150 °C
|
Package Body Material |
METAL
|
PLASTIC/EPOXY
|
Package Shape |
ROUND
|
RECTANGULAR
|
Package Style |
CYLINDRICAL
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
0.5 W
|
2.1 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
YES
|
Terminal Finish |
TIN LEAD
|
MATTE TIN
|
Terminal Form |
WIRE
|
GULL WING
|
Terminal Position |
BOTTOM
|
DUAL
|
Transistor Application |
AMPLIFIER
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Part Package Code |
|
SOT
|
Pin Count |
|
8
|
DS Breakdown Voltage-Min |
|
30 V
|
Drain Current-Max (ID) |
|
4.6 A
|
Drain-source On Resistance-Max |
|
0.035 Ω
|
Moisture Sensitivity Level |
|
1
|
Peak Reflow Temperature (Cel) |
|
260
|
|
|
|
Compare 2N6484 with alternatives
Compare ZXMN3F318DN8TA with alternatives