2N6756 vs IRF1404ZSTRLPBF feature comparison

2N6756 Harris Semiconductor

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IRF1404ZSTRLPBF Infineon Technologies AG

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Rohs Code No Yes
Part Life Cycle Code Obsolete Not Recommended
Ihs Manufacturer HARRIS SEMICONDUCTOR INFINEON TECHNOLOGIES AG
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature RADIATION HARDENED AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 40 V
Drain Current-Max (ID) 14 A 75 A
Drain-source On Resistance-Max 0.18 Ω 0.0037 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 150 pF
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2 R-PSSO-G2
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material METAL PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 75 W
Power Dissipation-Max (Abs) 75 W 200 W
Pulsed Drain Current-Max (IDM) 30 A 710 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish TIN LEAD Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form PIN/PEG GULL WING
Terminal Position BOTTOM SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 85 ns
Turn-on Time-Max (ton) 105 ns
Base Number Matches 5 1
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 330 mJ
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

Compare 2N6756 with alternatives

Compare IRF1404ZSTRLPBF with alternatives