2N6759 vs IRF323 feature comparison

2N6759 Rochester Electronics LLC

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IRF323 Rochester Electronics LLC

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Active Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown unknown
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 350 V 350 V
Drain Current-Max (ID) 4.5 A 2.8 A
Drain-source On Resistance-Max 1.5 Ω 2.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA TO-204AA
JESD-30 Code O-MBFM-P2 O-MBFM-P2
JESD-609 Code e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 7 A 11 A
Qualification Status COMMERCIAL COMMERCIAL
Surface Mount NO NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG PIN/PEG
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1

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