2N6767
vs
MTW6N60E
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Not Recommended
|
Obsolete
|
| Ihs Manufacturer |
SEMELAB LTD
|
MOTOROLA INC
|
| Package Description |
FLANGE MOUNT, O-MBFM-P2
|
FLANGE MOUNT, R-PSFM-T3
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
350 V
|
600 V
|
| Drain Current-Max (ID) |
12 A
|
6 A
|
| Drain-source On Resistance-Max |
5.4 Ω
|
1.2 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-3
|
TO-247
|
| JESD-30 Code |
O-MBFM-P2
|
R-PSFM-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
METAL
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
PIN/PEG
|
THROUGH-HOLE
|
| Terminal Position |
BOTTOM
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
15
|
3
|
| HTS Code |
|
8541.29.00.95
|
| Case Connection |
|
DRAIN
|
| JESD-609 Code |
|
e0
|
| Power Dissipation Ambient-Max |
|
150 W
|
| Power Dissipation-Max (Abs) |
|
150 W
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare 2N6767 with alternatives
Compare MTW6N60E with alternatives