2N6770
vs
IRF450
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
SEMELAB LTD
|
STMICROELECTRONICS
|
Package Description |
FLANGE MOUNT, O-MBFM-P2
|
|
Reach Compliance Code |
compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
500 V
|
500 V
|
Drain Current-Max (ID) |
12 A
|
13 A
|
Drain-source On Resistance-Max |
6 Ω
|
0.4 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-3
|
TO-3
|
JESD-30 Code |
O-MBFM-P2
|
O-MBFM-P2
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
PIN/PEG
|
PIN/PEG
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
HTS Code |
|
8541.29.00.95
|
Samacsys Manufacturer |
|
STMicroelectronics
|
Additional Feature |
|
HIGH VOLTAGE, FAST SWITCHING
|
Avalanche Energy Rating (Eas) |
|
650 mJ
|
Case Connection |
|
DRAIN
|
Feedback Cap-Max (Crss) |
|
200 pF
|
JESD-609 Code |
|
e0
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation Ambient-Max |
|
150 W
|
Power Dissipation-Max (Abs) |
|
150 W
|
Pulsed Drain Current-Max (IDM) |
|
52 A
|
Terminal Finish |
|
TIN LEAD
|
Transistor Application |
|
SWITCHING
|
Turn-off Time-Max (toff) |
|
210 ns
|
Turn-on Time-Max (ton) |
|
150 ns
|
|
|
|
Compare 2N6770 with alternatives
Compare IRF450 with alternatives