2N6770 vs JANTXV2N6770 feature comparison

2N6770 TT Electronics Power and Hybrid / Semelab Limited

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JANTXV2N6770 Unitrode Corporation

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer SEMELAB LTD UNITRODE CORP
Package Description FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V 500 V
Drain Current-Max (ID) 12 A 12 A
Drain-source On Resistance-Max 6 Ω 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-3 TO-204AA
JESD-30 Code O-MBFM-P2 O-MBFM-P2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form PIN/PEG PIN/PEG
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
HTS Code 8541.29.00.95
Case Connection DRAIN
Feedback Cap-Max (Crss) 200 pF
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 150 W
Pulsed Drain Current-Max (IDM) 25 A
Reference Standard MILITARY STANDARD (USA)
Transistor Application SWITCHING
Turn-off Time-Max (toff) 220 ns
Turn-on Time-Max (ton) 85 ns

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Compare JANTXV2N6770 with alternatives