2N6786 vs IRFF310R feature comparison

2N6786 International Rectifier

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IRFF310R Harris Semiconductor

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Pbfree Code No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC HARRIS SEMICONDUCTOR
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 0.82 mJ 150 mJ
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V 400 V
Drain Current-Max (ID) 1.25 A 1.35 A
Drain-source On Resistance-Max 3.6 Ω 3.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF TO-205AF
JESD-30 Code O-MBCY-W3 O-MBCY-W3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Cel) NOT APPLICABLE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 5.5 A 5.5 A
Qualification Status Not Qualified Not Qualified
Reference Standard MILITARY STANDARD (USA)
Surface Mount NO NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 11 1
Rohs Code No
Package Description CYLINDRICAL, O-MBCY-W3
HTS Code 8541.29.00.95
Case Connection DRAIN
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 15 W
Power Dissipation-Max (Abs) 15 W
Turn-off Time-Max (toff) 25 ns
Turn-on Time-Max (ton) 30 ns

Compare 2N6786 with alternatives

Compare IRFF310R with alternatives