2N6790
vs
JANTXV2N6790
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Contact Manufacturer
|
| Ihs Manufacturer |
MOTOROLA SEMICONDUCTOR PRODUCTS
|
SEMICOA CORP
|
| Package Description |
,
|
HERMETIC SEALED, TO-39, 3 PIN
|
| Reach Compliance Code |
unknown
|
unknown
|
| Configuration |
Single
|
SINGLE WITH BUILT-IN DIODE
|
| Drain Current-Max (Abs) (ID) |
3.5 A
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
20 W
|
|
| Surface Mount |
NO
|
NO
|
| Base Number Matches |
13
|
6
|
| ECCN Code |
|
EAR99
|
| Avalanche Energy Rating (Eas) |
|
0.242 mJ
|
| DS Breakdown Voltage-Min |
|
200 V
|
| Drain Current-Max (ID) |
|
3.5 A
|
| Drain-source On Resistance-Max |
|
0.85 Ω
|
| JEDEC-95 Code |
|
TO-205AF
|
| JESD-30 Code |
|
O-MBCY-W3
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
3
|
| Package Body Material |
|
METAL
|
| Package Shape |
|
ROUND
|
| Package Style |
|
CYLINDRICAL
|
| Pulsed Drain Current-Max (IDM) |
|
14 A
|
| Qualification Status |
|
Not Qualified
|
| Reference Standard |
|
MIL-19500
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
BOTTOM
|
| Transistor Application |
|
AMPLIFIER
|
| Transistor Element Material |
|
SILICON
|
|
|
|
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