2N6800TXV
vs
2N6800
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
MOTOROLA SEMICONDUCTOR PRODUCTS
|
| Package Description |
CYLINDRICAL, O-MBCY-W3
|
,
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
RADIATION HARDENED
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
400 V
|
|
| Drain Current-Max (ID) |
3 A
|
3 A
|
| Drain-source On Resistance-Max |
1 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-205AF
|
|
| JESD-30 Code |
O-MBCY-W3
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
METAL
|
|
| Package Shape |
ROUND
|
|
| Package Style |
CYLINDRICAL
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
14 A
|
|
| Qualification Status |
Not Qualified
|
|
| Reference Standard |
MILITARY STANDARD (USA)
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
|
| Terminal Position |
BOTTOM
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
4
|
12
|
| Rohs Code |
|
No
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
25 W
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
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