2N6802
vs
2N6802-QR-B
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Transferred
|
Active
|
Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
TT ELECTRONICS PLC
|
Package Description |
CYLINDRICAL, O-MBCY-W3
|
CYLINDRICAL, O-MBCY-W3
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE
|
SINGLE
|
DS Breakdown Voltage-Min |
500 V
|
500 V
|
Drain-source On Resistance-Max |
1.5 Ω
|
1.725 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-205AF
|
TO-205AF
|
JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
JESD-609 Code |
e0
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Reference Standard |
EUROPEAN SPACE AGENCY
|
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
5
|
2
|
Avalanche Energy Rating (Eas) |
|
0.35 mJ
|
Drain Current-Max (ID) |
|
2.5 A
|
Operating Temperature-Max |
|
150 °C
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Pulsed Drain Current-Max (IDM) |
|
11 A
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
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