2N6802 vs IRFF430R feature comparison

2N6802 International Rectifier

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IRFF430R Harris Semiconductor

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP HARRIS SEMICONDUCTOR
Part Package Code BCY
Package Description HERMETIC SEALED, TO-205AF, 3 PIN CYLINDRICAL, O-MBCY-W3
Pin Count 4
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 0.35 mJ 300 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V 500 V
Drain Current-Max (ID) 2.5 A 2.75 A
Drain-source On Resistance-Max 1.6 Ω 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF TO-205AF
JESD-30 Code O-MBCY-W3 O-MBCY-W3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 11 A 11 A
Qualification Status Not Qualified Not Qualified
Reference Standard MILITARY STANDARD (USA)
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 11 1
HTS Code 8541.29.00.95
JESD-609 Code e0
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 25 W
Power Dissipation-Max (Abs) 25 W
Terminal Finish TIN LEAD
Turn-off Time-Max (toff) 85 ns
Turn-on Time-Max (ton) 60 ns

Compare 2N6802 with alternatives

Compare IRFF430R with alternatives