2N6802
vs
JANTXV2N6802
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
No
|
|
Part Life Cycle Code |
Transferred
|
Contact Manufacturer
|
Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
SEMICOA CORP
|
Package Description |
CYLINDRICAL, O-MBCY-W3
|
HERMETIC SEALED, TO-39, 3 PIN
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
500 V
|
500 V
|
Drain-source On Resistance-Max |
1.5 Ω
|
1.6 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-205AF
|
TO-205AF
|
JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
JESD-609 Code |
e0
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Reference Standard |
EUROPEAN SPACE AGENCY
|
MIL-19500
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
5
|
1
|
Avalanche Energy Rating (Eas) |
|
0.35 mJ
|
Drain Current-Max (ID) |
|
2.5 A
|
Pulsed Drain Current-Max (IDM) |
|
11 A
|
Transistor Application |
|
AMPLIFIER
|
|
|
|
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