2N6849-QR-B
vs
2N6849-JQRR1
feature comparison
Pbfree Code |
No
|
Yes
|
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
SEMELAB LTD
|
SEMELAB LTD
|
Part Package Code |
BCY
|
BCY
|
Package Description |
CYLINDRICAL, O-MBCY-W3
|
CYLINDRICAL, O-MBCY-W3
|
Pin Count |
2
|
2
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
TT Electronics
|
|
Additional Feature |
AVALANCHE ENERGY RATED
|
AVALANCHE ENERGY RATED
|
Avalanche Energy Rating (Eas) |
500 mJ
|
500 mJ
|
Configuration |
SINGLE
|
SINGLE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
6.5 A
|
6.5 A
|
Drain-source On Resistance-Max |
0.3 Ω
|
0.3 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-205AF
|
TO-205AF
|
JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
25 A
|
25 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
JESD-609 Code |
|
e1
|
Terminal Finish |
|
TIN SILVER COPPER
|
|
|
|
Compare 2N6849-QR-B with alternatives
Compare 2N6849-JQRR1 with alternatives