2N6849PBF
vs
2N6849-JQR-BR1
feature comparison
Pbfree Code |
Yes
|
Yes
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
SEMELAB LTD
|
Package Description |
CYLINDRICAL, O-MBCY-W3
|
CYLINDRICAL, O-MBCY-W3
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Additional Feature |
AVALANCHE RATED
|
AVALANCHE ENERGY RATED
|
Avalanche Energy Rating (Eas) |
92 mJ
|
500 mJ
|
Configuration |
SINGLE
|
SINGLE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
6.5 A
|
6.5 A
|
Drain-source On Resistance-Max |
0.3 Ω
|
0.3 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-205AF
|
TO-205AF
|
JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
Peak Reflow Temperature (Cel) |
260
|
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Power Dissipation Ambient-Max |
25 W
|
|
Pulsed Drain Current-Max (IDM) |
25 A
|
25 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Reference Standard |
MILITARY STANDARD (USA)
|
|
Surface Mount |
NO
|
NO
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
40
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Max (toff) |
280 ns
|
|
Turn-on Time-Max (ton) |
200 ns
|
|
Base Number Matches |
1
|
1
|
Part Package Code |
|
BCY
|
Pin Count |
|
2
|
JESD-609 Code |
|
e1
|
Terminal Finish |
|
TIN SILVER COPPER
|
|
|
|
Compare 2N6849PBF with alternatives
Compare 2N6849-JQR-BR1 with alternatives