2N6849R1
vs
JANS2N6849
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
TT ELECTRONICS PLC
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
CYLINDRICAL, O-MBCY-W3
|
CYLINDRICAL, O-MBCY-W3
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
AVALANCHE ENERGY RATED
|
|
| Avalanche Energy Rating (Eas) |
500 mJ
|
92 mJ
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
6.5 A
|
6.5 A
|
| Drain-source On Resistance-Max |
0.3 Ω
|
0.345 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-205AF
|
TO-205AF
|
| JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
| JESD-609 Code |
e1
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
25 A
|
25 A
|
| Qualification Status |
Not Qualified
|
Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN SILVER COPPER
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
5
|
| Operating Temperature-Max |
|
150 °C
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Power Dissipation-Max (Abs) |
|
25 W
|
| Reference Standard |
|
MIL-19500/564
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare 2N6849R1 with alternatives
Compare JANS2N6849 with alternatives