2N7002DWL6327 vs 2N7002DW feature comparison

2N7002DWL6327 Infineon Technologies AG

Buy Now Datasheet

2N7002DW Jiangsu Changjiang Electronics Technology Co Ltd

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer INFINEON TECHNOLOGIES AG JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO LTD
Package Description SMALL OUTLINE, R-PDSO-G6
Pin Count 6
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.3 A 0.115 A
Drain-source On Resistance-Max 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 3 pF
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 0.5 W 0.2 W
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Base Number Matches 1 14
Samacsys Manufacturer Changjiang Electronics Tech (CJ)

Compare 2N7002DWL6327 with alternatives

Compare 2N7002DW with alternatives