2N7002ET1G vs 2N7002L6327 feature comparison

2N7002ET1G onsemi

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2N7002L6327 Infineon Technologies AG

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Pbfree Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ONSEMI INFINEON TECHNOLOGIES AG
Part Package Code SOT-23 (TO-236) 3 LEAD
Package Description HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN SMALL OUTLINE, R-PDSO-G3
Pin Count 3 3
Manufacturer Package Code 318-08
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer onsemi
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 0.26 A 0.3 A
Drain-source On Resistance-Max 2.5 Ω 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 0.3 W 0.5 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code Yes
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Feedback Cap-Max (Crss) 3 pF

Compare 2N7002ET1G with alternatives

Compare 2N7002L6327 with alternatives