2N7002K-T1-GE3 vs 2N7002M feature comparison

2N7002K-T1-GE3 Vishay Intertechnologies

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2N7002M Jiangsu Changjiang Electronics Technology Co Ltd

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Rohs Code Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO LTD
Package Description SOT-23, 3 PIN ,
Reach Compliance Code compliant unknown
Factory Lead Time 9 Weeks
Samacsys Manufacturer Vishay
Additional Feature LOW THRESHOLD, ESD PROTECTION, FAST SWITCHING
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.3 A
Drain-source On Resistance-Max 4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 0.35 W
Power Dissipation-Max (Abs) 0.35 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Base Number Matches 1 2
ECCN Code EAR99

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