2SA1162-O,LF
vs
BC859CWRFG
feature comparison
| Pbfree Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
TOSHIBA CORP
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
SMALL OUTLINE, R-PDSO-G3
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.95
|
8541.21.00.95
|
| Samacsys Manufacturer |
Toshiba
|
|
| Additional Feature |
LOW NOISE
|
HIGH RELIABILITY
|
| Collector Current-Max (IC) |
0.15 A
|
0.1 A
|
| Collector-Base Capacitance-Max |
7 pF
|
4.5 pF
|
| Collector-Emitter Voltage-Max |
50 V
|
30 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
70
|
420
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
125 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation Ambient-Max |
0.15 W
|
0.2 W
|
| Power Dissipation-Max (Abs) |
0.15 W
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
80 MHz
|
100 MHz
|
| VCEsat-Max |
0.3 V
|
0.65 V
|
| Base Number Matches |
1
|
1
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Min |
|
-55 °C
|
| Terminal Finish |
|
MATTE TIN
|
|
|
|
Compare 2SA1162-O,LF with alternatives
Compare BC859CWRFG with alternatives