2SB1002CH vs 2SB1026DMTL-E feature comparison

2SB1002CH Hitachi Ltd

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2SB1026DMTL-E Renesas Electronics Corporation

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Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer HITACHI LTD RENESAS ELECTRONICS CORP
Package Description SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Pin Count 3 4
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 1 A 1 A
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 100 30
JESD-30 Code R-PSSO-F3 R-PSSO-F3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 1 W 1 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form FLAT FLAT
Terminal Position SINGLE SINGLE
Base Number Matches 6 1
Pbfree Code Yes
Rohs Code Yes
Part Package Code UPAK
Manufacturer Package Code PLZZ0004CA
Date Of Intro 1997-08-01
Samacsys Manufacturer Renesas Electronics
Case Connection COLLECTOR
Collector-Emitter Voltage-Max 100 V
JESD-609 Code e6
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Terminal Finish TIN BISMUTH
Time@Peak Reflow Temperature-Max (s) 20
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 140 MHz

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