2SB1025DHTR vs 2SB1002CJTL-E feature comparison

2SB1025DHTR Hitachi Ltd

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2SB1002CJTL-E Renesas Electronics Corporation

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Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer HITACHI LTD RENESAS ELECTRONICS CORP
Package Description SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Pin Count 3 4
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 1 A 1 A
Collector-Emitter Voltage-Max 80 V 50 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 60 160
JESD-30 Code R-PSSO-F3 R-PSSO-F3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type PNP PNP
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form FLAT FLAT
Terminal Position SINGLE SINGLE
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 140 MHz 150 MHz
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
Part Package Code UPAK
Manufacturer Package Code PLZZ0004CA
Date Of Intro 1997-08-01
Samacsys Manufacturer Renesas Electronics
JESD-609 Code e6
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 1 W
Terminal Finish TIN BISMUTH
Time@Peak Reflow Temperature-Max (s) 20

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