2SB1026-DM vs 2SB1026DMTL-E feature comparison

2SB1026-DM Renesas Electronics Corporation

Buy Now Datasheet

2SB1026DMTL-E Renesas Electronics Corporation

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP RENESAS ELECTRONICS CORP
Package Description SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code unknown compliant
JESD-30 Code R-PSSO-F3 R-PSSO-F3
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form FLAT FLAT
Terminal Position SINGLE SINGLE
Base Number Matches 8 1
Pbfree Code Yes
Rohs Code Yes
Part Package Code UPAK
Pin Count 4
Manufacturer Package Code PLZZ0004CA
ECCN Code EAR99
Date Of Intro 1997-08-01
Samacsys Manufacturer Renesas Electronics
Case Connection COLLECTOR
Collector Current-Max (IC) 1 A
Collector-Emitter Voltage-Max 100 V
Configuration SINGLE
DC Current Gain-Min (hFE) 30
JESD-609 Code e6
Moisture Sensitivity Level 1
Number of Elements 1
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 1 W
Terminal Finish TIN BISMUTH
Time@Peak Reflow Temperature-Max (s) 20
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 140 MHz

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