2SB1216S-H vs 2SB1216T-TL-E feature comparison

2SB1216S-H onsemi

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2SB1216T-TL-E onsemi

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Pbfree Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ON SEMICONDUCTOR ON SEMICONDUCTOR
Part Package Code IPAK / TP
Package Description IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3 3
Manufacturer Package Code 369AJ 369AH
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer onsemi
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 4 A 4 A
Collector-Emitter Voltage-Max 100 V 100 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 140 200
JEDEC-95 Code TO-251 TO-252
JESD-30 Code R-PSIP-T3 R-PSSO-G2
JESD-609 Code e6 e6
Number of Elements 1 1
Number of Terminals 3 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 20 W 20 W
Surface Mount NO YES
Terminal Finish TIN BISMUTH TIN BISMUTH
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 130 MHz 130 MHz
Base Number Matches 1 1
Rohs Code Yes
Moisture Sensitivity Level 1

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