2SB764
vs
PDTC124EET/R
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
ON SEMICONDUCTOR
|
NEXPERIA
|
| Package Description |
,
|
SMALL OUTLINE, R-PDSO-G3
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
1 A
|
0.1 A
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN RESISTOR
|
| DC Current Gain-Min (hFE) |
60
|
60
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
|
| Polarity/Channel Type |
PNP
|
NPN
|
| Power Dissipation-Max (Abs) |
0.9 W
|
|
| Surface Mount |
NO
|
YES
|
| Base Number Matches |
3
|
2
|
| Rohs Code |
|
Yes
|
| Date Of Intro |
|
2017-02-01
|
| Additional Feature |
|
BUILT IN BIAS RESISTANCE RATIO IS 1
|
| Collector-Emitter Voltage-Max |
|
50 V
|
| JESD-30 Code |
|
R-PDSO-G3
|
| Number of Terminals |
|
3
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|
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