2SK2957L-E
vs
2SK2807-01L
feature comparison
Part Life Cycle Code |
Not Recommended
|
Obsolete
|
Ihs Manufacturer |
RENESAS ELECTRONICS CORP
|
FUJI ELECTRIC CO LTD
|
Package Description |
LDPAK-3
|
IN-LINE, R-PSIP-T3
|
Pin Count |
3
|
3
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
50 A
|
35 A
|
Drain-source On Resistance-Max |
0.018 Ω
|
0.03 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSIP-T3
|
R-PSIP-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
200 A
|
140 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Part Package Code |
|
TO-220AB
|
Additional Feature |
|
AVALANCHE RATED
|
JEDEC-95 Code |
|
TO-220AB
|
Power Dissipation-Max (Abs) |
|
30 W
|
|
|
|
Compare 2SK2957L-E with alternatives
Compare 2SK2807-01L with alternatives