2SK3155-E vs IRFP253R feature comparison

2SK3155-E Renesas Electronics Corporation

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IRFP253R Harris Semiconductor

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP HARRIS SEMICONDUCTOR
Part Package Code TO-220FM
Package Description FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Manufacturer Package Code PRSS0003AD
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Date Of Intro 1998-08-01
Samacsys Manufacturer Renesas Electronics
Case Connection ISOLATED DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V 150 V
Drain Current-Max (ID) 15 A 27 A
Drain-source On Resistance-Max 0.15 Ω 0.12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-247
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e2 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 30 W 180 W
Pulsed Drain Current-Max (IDM) 60 A 110 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN COPPER TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 810 mJ
Power Dissipation Ambient-Max 180 W
Turn-off Time-Max (toff) 220 ns
Turn-on Time-Max (ton) 210 ns

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