2SK3650-01SJ
vs
2SK3474-01
feature comparison
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
FUJI ELECTRIC CO LTD
|
FUJI ELECTRIC CO LTD
|
Package Description |
SMALL OUTLINE, R-PSSO-G2
|
CHIP CARRIER, S-XBCC-N4
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
169 mJ
|
169 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
150 V
|
150 V
|
Drain Current-Max (ID) |
33 A
|
33 A
|
Drain-source On Resistance-Max |
0.07 Ω
|
0.07 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSSO-G2
|
S-XBCC-N4
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
4
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
SQUARE
|
Package Style |
SMALL OUTLINE
|
CHIP CARRIER
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
132 A
|
132 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
NO LEAD
|
Terminal Position |
SINGLE
|
BOTTOM
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Pin Count |
|
4
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation-Max (Abs) |
|
75 W
|
|
|
|