3.0SMCJ10 vs SMLJ10A feature comparison

3.0SMCJ10 Taiwan Semiconductor

Buy Now Datasheet

SMLJ10A International Semiconductor Inc

Buy Now Datasheet
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD INTERNATIONAL SEMICONDUCTOR INC
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN LOW INDUCTANCE
Breakdown Voltage-Max 13.6 V 12.3 V
Breakdown Voltage-Min 11.1 V 11.1 V
Breakdown Voltage-Nom 12.35 V 11.7 V
Clamping Voltage-Max 18.8 V 17 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Rep Pk Reverse Voltage-Max 10 V 10 V
Reverse Current-Max 5 µA 5 µA
Reverse Test Voltage 10 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 18 5
Package Description R-PDSO-C2
Qualification Status Not Qualified

Compare SMLJ10A with alternatives