4AK17
vs
4AK17
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
HITACHI LTD
|
RENESAS TECHNOLOGY CORP
|
| Package Description |
IN-LINE, R-PSIP-T10
|
IN-LINE, R-PSIP-T10
|
| Pin Count |
10
|
10
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
|
2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
60 V
|
60 V
|
| Drain Current-Max (ID) |
10 A
|
10 A
|
| Drain-source On Resistance-Max |
0.065 Ω
|
0.065 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSIP-T10
|
R-PSIP-T10
|
| Number of Elements |
4
|
4
|
| Number of Terminals |
10
|
10
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
28 W
|
|
| Pulsed Drain Current-Max (IDM) |
40 A
|
40 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
|
|
|