63RS881NS vs N82S181CNB feature comparison

63RS881NS Monolithic Memories (RETIRED)

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N82S181CNB Philips Semiconductors

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MONOLITHIC MEMORIES SIGNETICS CORP
Reach Compliance Code unknown unknown
Access Time-Max 30 ns 30 ns
JESD-30 Code R-PDIP-T24 R-PDIP-T24
JESD-609 Code e0 e0
Memory Density 8192 bit 8192 bit
Memory IC Type OTP ROM OTP ROM
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 24 24
Number of Words 1024 words 1024 words
Number of Words Code 1000 1000
Operating Mode SYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 75 °C 75 °C
Operating Temperature-Min
Organization 1KX8 1KX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Equivalence Code DIP24,.3 DIP24,.6
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Supply Voltage-Max (Vsup) 5.25 V 5.25 V
Supply Voltage-Min (Vsup) 4.75 V 4.75 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS BIPOLAR
Temperature Grade COMMERCIAL EXTENDED COMMERCIAL EXTENDED
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Base Number Matches 3 2
Package Description DIP, DIP24,.6
ECCN Code EAR99
HTS Code 8542.32.00.71
Output Characteristics 3-STATE
Supply Current-Max 0.175 mA

Compare 63RS881NS with alternatives

Compare N82S181CNB with alternatives