6MBI25F-120
vs
MG25Q6ES50A
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
COLLMER SEMICONDUCTOR INC
|
TOSHIBA CORP
|
Package Description |
FLANGE MOUNT, R-XUFM-X19
|
FLANGE MOUNT, R-XUFM-X17
|
Pin Count |
19
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
LOW SATURATION VOLTAGE
|
HIGH SPEED
|
Collector Current-Max (IC) |
25 A
|
35 A
|
Collector-Emitter Voltage-Max |
1200 V
|
1200 V
|
JESD-30 Code |
R-XUFM-X19
|
R-XUFM-X17
|
Number of Elements |
6
|
6
|
Number of Terminals |
19
|
17
|
Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
UNSPECIFIED
|
UNSPECIFIED
|
Terminal Position |
UPPER
|
UPPER
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Nom (toff) |
1500 ns
|
600 ns
|
Turn-on Time-Nom (ton) |
800 ns
|
150 ns
|
Base Number Matches |
1
|
1
|
HTS Code |
|
8541.29.00.95
|
Case Connection |
|
ISOLATED
|
Configuration |
|
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
|
Fall Time-Max (tf) |
|
300 ns
|
Gate-Emitter Thr Voltage-Max |
|
6 V
|
Gate-Emitter Voltage-Max |
|
20 V
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation Ambient-Max |
|
200 W
|
Power Dissipation-Max (Abs) |
|
200 W
|
Transistor Application |
|
MOTOR CONTROL
|
VCEsat-Max |
|
3.6 V
|
|
|
|
Compare 6MBI25F-120 with alternatives
Compare MG25Q6ES50A with alternatives