934056289115
vs
PUMB11,135
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
NEXPERIA
|
NXP SEMICONDUCTORS
|
| Package Description |
SMALL OUTLINE, R-PDSO-G6
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Date Of Intro |
2017-02-01
|
|
| Additional Feature |
BUILT IN BIAS RESISTOR RATIO IS 1
|
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| Collector-Emitter Voltage-Max |
50 V
|
|
| Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
|
|
| DC Current Gain-Min (hFE) |
30
|
30
|
| JESD-30 Code |
R-PDSO-G6
|
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Elements |
2
|
2
|
| Number of Terminals |
6
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN
|
TIN
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
2
|
| Part Package Code |
|
TSSOP
|
| Pin Count |
|
6
|
| Manufacturer Package Code |
|
SOT363
|
| Power Dissipation-Max (Abs) |
|
0.3 W
|
|
|
|
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