AIGW40N65H5
vs
IGW50N65F5
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
,
|
,
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
74 A
|
80 A
|
| Collector-Emitter Voltage-Max |
650 V
|
650 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Gate-Emitter Thr Voltage-Max |
4.8 V
|
4.8 V
|
| Gate-Emitter Voltage-Max |
20 V
|
20 V
|
| JEDEC-95 Code |
TO-247
|
TO-247
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
| JESD-609 Code |
e3
|
e3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
250 W
|
305 W
|
| Reference Standard |
AEC-Q101
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin (Sn)
|
Tin (Sn)
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Application |
POWER CONTROL
|
POWER CONTROL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Nom (toff) |
203 ns
|
205 ns
|
| Turn-on Time-Nom (ton) |
31 ns
|
35 ns
|
| VCEsat-Max |
2.1 V
|
2.1 V
|
| Base Number Matches |
2
|
6
|
| Pbfree Code |
|
Yes
|
| Factory Lead Time |
|
4 Weeks
|
| Samacsys Manufacturer |
|
Infineon
|
|
|
|
Compare AIGW40N65H5 with alternatives
Compare IGW50N65F5 with alternatives