APT10045JLL
vs
IXFR21N100Q
feature comparison
Pbfree Code |
Yes
|
Yes
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
MICROSEMI CORP
|
IXYS CORP
|
Part Package Code |
ISOTOP
|
|
Package Description |
ISOTOP-4
|
ISOPLUS247, 3 PIN
|
Pin Count |
4
|
3
|
Manufacturer Package Code |
ISOTOP
|
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Microsemi Corporation
|
|
Avalanche Energy Rating (Eas) |
2500 mJ
|
2500 mJ
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
1000 V
|
1000 V
|
Drain Current-Max (ID) |
21 A
|
18 A
|
Drain-source On Resistance-Max |
0.45 Ω
|
0.5 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PUFM-X4
|
R-PSIP-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
IN-LINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
460 W
|
400 W
|
Pulsed Drain Current-Max (IDM) |
84 A
|
84 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Reference Standard |
UL RECOGNIZED
|
|
Surface Mount |
NO
|
NO
|
Terminal Form |
UNSPECIFIED
|
THROUGH-HOLE
|
Terminal Position |
UPPER
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
10
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
3
|
2
|
Additional Feature |
|
AVALANCHE RATED
|
JESD-609 Code |
|
e1
|
Terminal Finish |
|
TIN SILVER COPPER
|
|
|
|
Compare APT10045JLL with alternatives
Compare IXFR21N100Q with alternatives