APT10M07JVFR
vs
IXFN180N10
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Transferred
|
Not Recommended
|
Ihs Manufacturer |
MICROSEMI CORP
|
LITTELFUSE INC
|
Part Package Code |
ISOTOP
|
|
Package Description |
ISOTOP-4
|
|
Pin Count |
4
|
|
Manufacturer Package Code |
ISOTOP
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
3600 mJ
|
|
Case Connection |
ISOLATED
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min |
100 V
|
|
Drain Current-Max (ID) |
225 A
|
|
Drain-source On Resistance-Max |
0.007 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
JESD-30 Code |
R-PUFM-X4
|
|
JESD-609 Code |
e1
|
|
Number of Elements |
1
|
|
Number of Terminals |
4
|
|
Operating Mode |
ENHANCEMENT MODE
|
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
FLANGE MOUNT
|
|
Polarity/Channel Type |
N-CHANNEL
|
|
Power Dissipation-Max (Abs) |
700 W
|
|
Pulsed Drain Current-Max (IDM) |
900 A
|
|
Qualification Status |
Not Qualified
|
|
Reference Standard |
UL RECOGNIZED
|
|
Surface Mount |
NO
|
|
Terminal Finish |
TIN SILVER COPPER
|
|
Terminal Form |
UNSPECIFIED
|
|
Terminal Position |
UPPER
|
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
|
Base Number Matches |
3
|
2
|
Samacsys Manufacturer |
|
LITTELFUSE
|
|
|
|
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