APT20M11JVFR
vs
APT20M11JVR
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Active
|
Ihs Manufacturer |
MICROSEMI CORP
|
MICROCHIP TECHNOLOGY INC
|
Part Package Code |
ISOTOP
|
|
Package Description |
ISOTOP-4
|
|
Pin Count |
4
|
|
Manufacturer Package Code |
ISOTOP
|
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
FRED FET
|
HIGH VOLTAGE
|
Avalanche Energy Rating (Eas) |
3600 mJ
|
3600 mJ
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
200 V
|
200 V
|
Drain Current-Max (ID) |
175 A
|
175 A
|
Drain-source On Resistance-Max |
0.011 Ω
|
0.011 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PUFM-X4
|
R-PUFM-X4
|
JESD-609 Code |
e1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
4
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
700 W
|
|
Pulsed Drain Current-Max (IDM) |
700 A
|
700 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN SILVER COPPER
|
|
Terminal Form |
UNSPECIFIED
|
UNSPECIFIED
|
Terminal Position |
UPPER
|
UPPER
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
3
|
3
|
Factory Lead Time |
|
26 Weeks
|
Samacsys Manufacturer |
|
Microchip
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
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