APT20M11JVR
vs
IXFR230N20T
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
LITTELFUSE INC
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
26 Weeks
|
|
| Samacsys Manufacturer |
Microchip
|
LITTELFUSE
|
| Additional Feature |
HIGH VOLTAGE
|
AVALANCHE RATED
|
| Avalanche Energy Rating (Eas) |
3600 mJ
|
5000 mJ
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
200 V
|
200 V
|
| Drain Current-Max (ID) |
175 A
|
156 A
|
| Drain-source On Resistance-Max |
0.011 Ω
|
0.008 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PUFM-X4
|
R-PSIP-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
175 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
IN-LINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
700 A
|
630 A
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
UNSPECIFIED
|
THROUGH-HOLE
|
| Terminal Position |
UPPER
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
10
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Feedback Cap-Max (Crss) |
|
60 pF
|
| JESD-609 Code |
|
e1
|
| Operating Temperature-Min |
|
-55 °C
|
| Power Dissipation-Max (Abs) |
|
600 W
|
| Reference Standard |
|
UL RECOGNIZED
|
| Terminal Finish |
|
Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
|
|
|
|
Compare APT20M11JVR with alternatives
Compare IXFR230N20T with alternatives